Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

被引：10
|
作者：
Li, T. T. [1 ]
Aji, L. B. Bayu [1 ]
Heo, T. W. [1 ]
Santala, M. K. [2 ]
Kucheyev, S. O. [1 ]
Campbell, G. H. [1 ]
机构：
[1] Lawrence Livermore Natl Lab, Div Mat Sci, 7000 East Ave, Livermore, CA 94551 USA
[2] Oregon State Univ, Mech Ind & Mfg Engn, 204 Rogers Hall, Corvallis, OR 97331 USA
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 22期
关键词：
FLUCTUATION ELECTRON-MICROSCOPY; RELAXATION;
D O I：
10.1063/1.4953153
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. The propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization. Published by AIP Publishing.
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页数：5
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