Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape

被引：26
|
作者：
Katsoulis, G. P. [1 ]
Hadjipittas, A. [1 ]
Bergues, B. [2 ,3 ]
Kling, M. F. [2 ,3 ]
Emmanouilidou, A. [1 ]
机构：
[1] UCL, Dept Phys & Astron, Gower St, London WC1E 6BT, England
[2] Ludwig Maximilians Univ Munchen, Dept Phys, Coulombwall 1, D-85748 Garching, Germany
[3] Max Planck Inst Quantum Opt, Hans Kopfermann Str 1, D-85748 Garching, Germany
来源：
PHYSICAL REVIEW LETTERS | 2018年 / 121卷 / 26期
基金：
英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词：
MULTIPLE IONIZATION; ATOMS; SPECTRA;
D O I：
10.1103/PhysRevLett.121.263203
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
At intensities below the recollision threshold, we show that recollision-induced excitation with one electron escaping fast after recollision and the other electron escaping with a time delay via a Coulomb slingshot motion is one of the most important mechanisms of nonsequential double ionization (NSDI), for strongly driven He at 400 nm. Slingshot NSDI is a general mechanism present for a wide range of low intensities and pulse durations. Anticorrelated two-electron escape is its striking hallmark. This mechanism offers an alternative explanation of anticorrelated two-electron escape obtained in previous studies.
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页数：6
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