Numerical Simulations of Variable-Range Hopping

被引：6
|
作者：
Ortuno, Miguel [1 ]
Estelles-Duart, Francisco [1 ]
Somoza, Andres M. [1 ]
机构：
[1] Univ Murcia, Dept Fis CIOyN, Murcia 30100, Spain
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2022年 / 259卷 / 01期
关键词：
disordered systems; hopping conduction; interactions; LOW-TEMPERATURE CONDUCTIVITY; COULOMB GAP; DISORDERED-SYSTEMS; DOPED GAAS; TRANSPORT; SEMICONDUCTOR; DEPENDENCE; TRANSITION; DYNAMICS; FILMS;
D O I：
10.1002/pssb.202100340
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Numerical simulations of variable-range hopping in 2D and 3D systems with states localized by the disorder are reviewed. Both interacting and noninteracting systems are considered. After reviewing the main theories for variable-range hopping, Mott's and Efros and Shkolvskii's, the numerical techniques are presented that are employed for this problem. Existing results are presented and some new ones obtained for this contribution, concentrating on the value of the proportionality constant on the characteristic temperatures of the different conduction laws and on the form of the pre-exponential factor.
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页数：10
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