Interfacial charge transfer and charge generation in organic electronic devices

被引:75
|
作者
Matsushima, Toshinori [1 ]
Jin, Guang-He [1 ]
Kanai, Yoshihiro [1 ]
Yokota, Tomoyuki [1 ]
Kitada, Seiki [1 ]
Kishi, Toshiyuki [1 ]
Murata, Hideyuki [1 ]
机构
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
关键词
Organic light-emitting diodes; Hole-only devices; Interfacial charge transfer and generation; Organic hole-transport materials and layers; Molybdenum trioxide; LIGHT-EMITTING-DIODES; TRANSITION-METAL OXIDES; MOLYBDENUM TRIOXIDE; HOLE INJECTION; BUFFER LAYER; MOBILITY; SPECTROSCOPY; FILMS;
D O I
10.1016/j.orgel.2011.01.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have recently proposed that improvement of device performance using a buffer layer of molybdenum trioxide (MoO3) originates from interfacial charge generation at an interface of MoO3 and an organic hole-transport layer [17]. However, there is no clear experimental evidence enough to support the charge generation in our recent report. In this study, from comparison of current density-voltage characteristics of organic hole-only devices and ultraviolet/visible/near-infrared absorption spectra of composite films, we can conclude that the interfacial charge generation surly occurs to realize space-charge-limited currents of a wide variety of organic hole-transport layers. Moreover, a drastic increase in current density of a bilayer device of n-type C60 and p-type N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPD) by using a MoO3 layer can provide the evidence of the charge generation. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:520 / 528
页数:9
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