High-performance organic field-effect transistors based on copper/copper sulphide bilayer source-drain electrodes

被引：15
|
作者：
Gu, Wen [1 ]
Jin, Weipeng [1 ]
Wei, Bin [1 ]
Zhang, Jianhua [1 ]
Wang, Jun [1 ]
机构：
[1] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 24期
基金：
中国国家自然科学基金;
关键词：
THIN-FILM TRANSISTORS; BUFFER LAYER; PENTACENE; MOBILITY;
D O I：
10.1063/1.3526737
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate an organic field-effect transistor (OFET) using copper (Cu) and copper sulfide (CuxS) as the source-drain electrodes. The OFET using Cu/CuxS results in a fivefold higher field-effect mobility and a 12 V reduction in threshold voltage as compared with the conventional devices with gold electrodes. The improvements of device performances are attributed to the enhancement of charge-injection. X-ray photoelectron spectroscopy revealed that sulfate ions were formed during deposition, which is considered to be responsible for the improvements. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3526737]
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页数：3
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