High-performance organic field-effect transistors based on copper/copper sulphide bilayer source-drain electrodes

被引：15

作者：

Gu, Wen ^{[1
]}

Jin, Weipeng ^{[1
]}

Wei, Bin ^{[1
]}

Zhang, Jianhua ^{[1
]}

Wang, Jun ^{[1
]}

机构：

[1] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 24期

基金：

中国国家自然科学基金;

关键词：

THIN-FILM TRANSISTORS; BUFFER LAYER; PENTACENE; MOBILITY;

D O I：

10.1063/1.3526737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an organic field-effect transistor (OFET) using copper (Cu) and copper sulfide (CuxS) as the source-drain electrodes. The OFET using Cu/CuxS results in a fivefold higher field-effect mobility and a 12 V reduction in threshold voltage as compared with the conventional devices with gold electrodes. The improvements of device performances are attributed to the enhancement of charge-injection. X-ray photoelectron spectroscopy revealed that sulfate ions were formed during deposition, which is considered to be responsible for the improvements. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3526737]

引用

页数：3

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