共 50 条
- [21] Strain-Related Degradation of GaN-Based Blue Laser DiodesIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2019, 25 (06)Wen, Pengyan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaXiu, Huixin论文数: 0 引用数: 0 h-index: 0机构: Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, Shanghai 200000, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaZhang, Shuming论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaLiu, Jianping论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaZhang, Liqun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaTian, Aiqin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaZhang, Feng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaZhou, Renlin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaLi, Deyao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China论文数: 引用数: h-index:机构:Zhou, Wei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R ChinaYang, Hui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
- [22] Comparative analysis of efficiency limitations in GaN-based blue laser diodes2016 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2016, : 205 - 206Piprek, Joachim论文数: 0 引用数: 0 h-index: 0机构: NUSOD Inst LLC, Newark, DE 19714 USA NUSOD Inst LLC, Newark, DE 19714 USA
- [23] Investigation of degradation mechanism in GaN-based blue and ultraviolet laser diodesJOURNAL OF APPLIED PHYSICS, 2023, 134 (09)Huang, Yujie论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaYang, Jing论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaLiu, Zongshun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaLiang, Feng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R ChinaZhao, Degang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
- [24] GaN-based high-output-power blue laser diodesIEEJ Transactions on Electronics, Information and Systems, 2008, 128 (05) : 744 - 747Miyoshi, Takashi论文数: 0 引用数: 0 h-index: 0机构: Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, Japan Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, JapanKozaki, Tokuya论文数: 0 引用数: 0 h-index: 0机构: Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, Japan Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, JapanYanamoto, Tomoya论文数: 0 引用数: 0 h-index: 0机构: Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, Japan Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, JapanFujimura, Yasushi论文数: 0 引用数: 0 h-index: 0机构: Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, Japan Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, JapanNagahama, Shin-Ichi论文数: 0 引用数: 0 h-index: 0机构: Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, Japan Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, JapanMukai, Takashi论文数: 0 引用数: 0 h-index: 0机构: Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, Japan Nichia Corporation, 491 Oka, Kaminaka-cho, Anan, Tokushima 774-8601, Japan
- [25] Inhomogeneity of InGaN quantum wells in GaN-based blue laser diodesPHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2788 - +论文数: 引用数: h-index:机构:Ryu, H. Y.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South KoreaPaek, H. S.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South KoreaSon, J. K.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South KoreaSakong, T.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South KoreaJang, T.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South KoreaSung, Y. J.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South KoreaKim, K. S.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South KoreaHa, K. H.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South KoreaNam, O. H.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South KoreaPark, Y.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea Samsung Adv Inst Technol, Photon Project Team, Suwon 440600, South Korea
- [26] Investigation of Output Nonlinearity Mechanisms in Gan-Based Blue Laser Diodes2016 13TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA 2016), 2016, : 3 - 6Huang, Ying论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaWen, Pengyan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaLi, Deyao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaLiu, Jianping论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaIkeda, Masao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaHe, Junlei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaZhang, Shuming论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaZhang, Liqun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R ChinaYang, Hui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
- [27] GaN-based high power blue-violet laser diodesJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A): : 3206 - 3210Tojyo, T论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanAsano, T论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanTakeya, M论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanHino, T论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanKijima, S论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanGoto, S论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanUchida, S论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanIkeda, M论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan
- [28] GaN-based high power blue-violet laser diodesPROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 878 - 882Tojyo, T论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanAsano, T论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanYanashima, K论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanTakeya, M论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanHino, T论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanKijima, S论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanIkeda, S论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanAnsai, S论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanShibuya, K论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanGoto, S论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanTomiya, S论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanNaganuma, K论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanYabuki, Y论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanUchida, S论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, JapanIkeda, M论文数: 0 引用数: 0 h-index: 0机构: Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan Sony Shiroishi Semicond Inc, Dev Ctr, Shiroi, Miyagi 9890734, Japan
- [29] Continuous-wave electrically injected GaN-on-Si microdisk laser diodesOPTICS EXPRESS, 2020, 28 (08) : 12201 - 12208Wang, Jin论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol Beijing, Beijing 100083, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R ChinaFeng, Meixin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanokch & Nanobion, Foshan 528200, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R ChinaZhou, Rui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Univ Sci & Technol China, Hefei 230026, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R ChinaSun, Qian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanokch & Nanobion, Foshan 528200, Peoples R China Univ Sci & Technol China, Hefei 230026, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R ChinaLiu, Jianxun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R ChinaSun, Xiujian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R ChinaZheng, Xinhe论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol Beijing, Beijing 100083, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R ChinaIkeda, Masao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R ChinaSheng, Xing论文数: 0 引用数: 0 h-index: 0机构: Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R ChinaYang, Hui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China Univ Sci & Technol China, Hefei 230026, Peoples R China Univ Sci & Technol Beijing, Beijing 100083, Peoples R China
- [30] On-wafer continuous-wave operation of InGaN/GaN violet laser diodesELECTRONICS LETTERS, 2000, 36 (21) : 1779 - 1780Hasnain, G论文数: 0 引用数: 0 h-index: 0机构: Agilent Technol, Palo Alto, CA 94304 USA Agilent Technol, Palo Alto, CA 94304 USATakeuchi, T论文数: 0 引用数: 0 h-index: 0机构: Agilent Technol, Palo Alto, CA 94304 USA Agilent Technol, Palo Alto, CA 94304 USASchneider, R论文数: 0 引用数: 0 h-index: 0机构: Agilent Technol, Palo Alto, CA 94304 USA Agilent Technol, Palo Alto, CA 94304 USASong, S论文数: 0 引用数: 0 h-index: 0机构: Agilent Technol, Palo Alto, CA 94304 USA Agilent Technol, Palo Alto, CA 94304 USATwist, R论文数: 0 引用数: 0 h-index: 0机构: Agilent Technol, Palo Alto, CA 94304 USA Agilent Technol, Palo Alto, CA 94304 USABlomqvist, M论文数: 0 引用数: 0 h-index: 0机构: Agilent Technol, Palo Alto, CA 94304 USA Agilent Technol, Palo Alto, CA 94304 USAKocot, C论文数: 0 引用数: 0 h-index: 0机构: Agilent Technol, Palo Alto, CA 94304 USA Agilent Technol, Palo Alto, CA 94304 USAFlory, C论文数: 0 引用数: 0 h-index: 0机构: Agilent Technol, Palo Alto, CA 94304 USA Agilent Technol, Palo Alto, CA 94304 USA