Magnetic Nano Anisotropy by Ion Irradiation

被引：0

作者：

Bhattacharjee, S. ^{[1
]}

Karmakar, P.

Sinha, A. K. ^{[1
]}

Chakrabarti, A.

机构：

[1] UGC DAE Consortium Sci Res, 3-LB-8 Saltlake, Kolkata 700098, India

来源：

SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B | 2011年 / 1349卷

关键词：

magnetism; ion bombardment; ripple; IMPLANTATION; BOMBARDMENT;

D O I：

10.1063/1.3606006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have reported the formation of magnetic and non magnetic regime in the same sample by oblique incidence 36keV Fe3+ ion bombardment on Si(100) ripple structures prefabricated by 8keV O1+ bombardment at oblique angle. The same phenomenon is also observed on ion induced rippled ZnO thin films deposited of on Si(100). Ex situ atomic force microscopy (AFM) and magnetic force microscopy (MFM) measurements reveals the development of ripple structure and magnetic regime.

引用

页码：611 / +

页数：2

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