Preparation of self-assembled mercaptoalkanoic acid multilayers on GaAs (110) surfaces

被引：13

作者：

Ohno, H

Nagahara, LA

Mizutani, W

Takagi, J

Tokumoto, H

机构：

[1] Sharp Co Ltd, Corp Res & Dev Grp, Adv Technol Res Labs, Tenri, Nara 6328567, Japan

[2] Motorola Inc, Phoenix Corp Res Labs, Tempe, AZ 85284 USA

[3] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 1A期

关键词：

self-assembled multilayer; 16-mercaptohexadecanoic acid; GaAs (110); copper acetate; ionic interaction; atomic force microscopy; X-ray photoelectron spectroscopy; infrared spectroscopy; Auger electron spectroscopy;

D O I：

10.1143/JJAP.38.180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mono- and double layer films have been formed by the self-assembly of 16-mercapto-hexadecanoic acid, (MHDA), HS(CH2)(15)COOH, via selective ionic interaction. To understand the formation process in the nanometer length scale, atomic force microscopy (AFM) studies have been conducted in combination with micro X-ray photoelectron spectroscopy (mu-XPS), Auger electron spectroscopy (AES) and-micro-fourier transform infrared spectroscopy with the attenuated total reflection method (mu-FTIR ATR). After the formation of a self-assembled monolayer (SAM) was completed,. the surface treated with copper ions was immersed in a solution of MHDA. By this method, an atomically smooth double layer was successfully formed on cleaved GaAs (110)surfaces. The formation speed of the second layer was faster Wan that of the SAM, indicating stronger interaction of thiol functional groups with Cu2+ ions than with GaAs surfaces.

引用

页码：180 / 185

页数：6

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