Stoichiometry of Nickel Oxide Films Prepared by ALD

被引：45

作者：

Bachmann, Julien ^{[1
]}

Zolotaryov, Andriy ^{[1
]}

Albrecht, Ole ^{[1
]}

Goetze, Silvana ^{[2
]}

Berger, Andreas ^{[2
]}

Hesse, Dietrich ^{[2
]}

Novikov, Dmitri ^{[3
]}

Nielsch, Kornelius ^{[1
]}

机构：

[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[3] HASYLAB DESY, D-22603 Hamburg, Germany

来源：

CHEMICAL VAPOR DEPOSITION | 2011年 / 17卷 / 7-9期

关键词：

ATOMIC LAYER DEPOSITION; NIO FILMS; THIN-FILMS; PRECURSORS; MAGNETISM; OXYGEN;

D O I：

10.1002/cvde.201004300

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: Nickel oxide films obtained from nickelocene and ozone by atomic layer deposition at 230 degrees C are substoichiometric, but have the crystal structure of NiO. Oxygen can be driven out of the solid by annealing under inert atmosphere, or added into it via aerobic annealing.

引用

页码：177 / +

页数：5

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