Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

被引：19

作者：

Le Royer, C. ^{[1
,2
]}

Mohamad, B. ^{[1
,2
]}

Biscarrat, J. ^{[1
,2
]}

Vauche, L. ^{[1
,2
]}

Escoffier, R. ^{[1
,2
]}

Buckley, J. ^{[1
,2
]}

Becu, S. ^{[1
,2
]}

Riat, R. ^{[1
,2
]}

Gillot, C. ^{[1
,2
]}

Charles, M. ^{[1
,2
]}

Ruel, S. ^{[1
,2
]}

Pimenta-Barros, P. ^{[1
,2
]}

Posseme, N. ^{[1
,2
]}

Besson, P. ^{[1
,2
]}

Boudaa, F. ^{[1
,2
]}

Vannuffel, C. ^{[1
,2
]}

Vandendaele, W. ^{[1
,2
]}

Viey, A. G. ^{[1
,2
]}

Krakovinsky, A. ^{[1
,2
]}

Jaud, M. -A. ^{[1
,2
]}

Modica, R. ^{[3
]}

Iucolano, F. ^{[3
]}

Le Tiec, R. ^{[4
]}

Levi, S. ^{[4
]}

Orsatelli, M. ^{[5
]}

Gwoziecki, R. ^{[1
,2
]}

Sousa, V. ^{[1
,2
]}

机构：

[1] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

[2] Univ Grenoble Alpes, F-38000 Grenoble, France

[3] STMicroelectronics, Stradale Primosole 50, I-95121 Catania, Italy

[4] PDC Bsiness Grp, Appl Mat, IL-76705 Rehovot, Israel

[5] CEA Tech Occitanie, F-31670 Labege, France

来源：

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年

关键词：

Power; GaN-on-Si; AlGaN/GaN; MOSc HEMT; fully recessed gate architecture; 200mm Si substrates; ON state resistance; 650V application; packaged devices;

D O I：

10.1109/ISPSD49238.2022.9813672

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper we present a detailed performance status of AlGaN/GaN MOS channel High Electron Mobility Transistors (MOSc HEMTs) with fully recessed gate architecture on 200mm Si substrates. We report a wide range of wafer and package level results. ON state resistance is studied through three aspects: i) RON partitioning with analysis of its four components, ii) RON temperature dependence, iii) cumulative dynamic RON under stress. For accurate power assessment we characterize packaged devices and compare the typical figures of merit (gate charge, switching tests) to state of the art references (especially pGaN gate HEMTs). We highlight the benefits offered by this technology for 650V applications, such as very low I-GSS leakage even at 150 degrees C, and better switching performances, t(d(on)), t(d(off)).

引用

页码：49 / 52

页数：4

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