A study on packaging design of SiC power module using near-field magnetic scanning techniques

被引：0
|
作者：
Ibuchi, Takaaki [1 ]
Masuda, Eisuke [1 ]
Funaki, Tsuyoshi [1 ]
Otake, Hirotaka [2 ]
Miyazaki, Tatsuya [2 ]
Kanetake, Yasuo [2 ]
Nakamura, Takashi [2 ]
机构：
[1] Osaka Univ, Div Elect Elect & Informat Engn, Grad Sch Engn, Suita, Osaka 5650871, Japan
[2] ROHM Co Ltd, Kyoto 6158515, Japan
来源：
2017 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP) | 2017年
关键词：
SiC power module; parasitic inductance; near-field magnetic scanning; snubber capacitor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This report focuses the current distribution in a module identified with magnetic near-field intensity for optimizing layout and packaging design of silicon carbide (SIC) power module. This measurement methodology can visualize the practical current distribution on a wiring pattern in a module and can estimate the effect of snubber capacitor in a DC-link of half-bridge to suppress the voltage overshoot and ringing oscillation.
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页数：4
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