Radiation hard InGaP for high efficiency multi-junction solar cells

Present study demonstrates isothermal and injection annealing recovery of photovoltaic parameters in InGaP solar cells after 1 MeV electron irradiation and correlation with changes in the Deep Level Transient Spectroscopy (DLTS) spectra observed in p-InGaP. In particular, the dominant hole level H2 (0.50-0.55 eV) is found to be significantly decay as a result of 40 days room temperature storage. In addition, a minority-carrier injection-enhanced annealing of the trap H2 has also been observed. Furthermore, an evidence of large minority carrier capture cross section for the hole trap H2 has been obtained by double-carrier pulse DLTS which demonstrate the role of this trap act as an apparent recombination center.