Prospect of soft switching power converter technologies

被引：0
|
作者：
Trivedi, M [1 ]
Shenai, K [1 ]
机构：
[1] Univ Illinois, Dept Elect Engn & Comp Sci, Chicago, IL 60607 USA
来源：
CONFERENCE RECORD OF THE 1998 TWENTY-THIRD INTERNATIONAL POWER MODULATOR SYMPOSIUM | 1998年
关键词：
D O I：
10.1109/MODSYM.1998.741207
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports a detailed study of hard and soft-switching performance of high power unipolar and bipolar silicon transistors. Extensive measurements and rigorous two-dimensional (2-D) simulations are used to understand the switching dynamics of power bipolar transistors, power MOSFETs, and insulated gate bipolar transistors (IGBT) in zero-voltage and zero-current switching conditions. It is shown that these devices exhibit distinct switching characteristics during turn-off under various switching conditions.
引用
收藏
页码：119 / 122
页数：4
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