Temperature dependence of the short circuit current and spectral responsivity of various kinds of crystalline silicon photovoltaic devices

The short-circuit current I-sc and spectral responsivity (SR) of crystalline silicon (c-Si) photovoltaic (PV) modules and cells are investigated at various device temperatures. The long-wavelength tail of SR shifts toward longer wavelengths as the temperature increases. Although the wavelength shift Delta lambda per temperature difference Delta T is dependent on the device structure and lambda, the present results show that the shift in the quantum efficiency (QE), which is related to SR by QE approximate to SR x 1240/lambda, can be approximated using the wavelength-independent constant of Delta lambda/Delta T similar to 0.45 nm/ K for various types of c-Si device. The results indicate that the temperature dependence of SR can be approximated using a simple relation for various types of c-Si PV device, which greatly improves the precision of spectral mismatch correction when SR at only one temperature is available. (c) 2018 The Japan Society of Applied Physics.