p-Type conduction in stacking-fault-free m-plane GaN

被引：46
|
作者：
McLaurin, Melvin [1 ]
Speck, James S. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, JST ERATO Grp, Santa Barbara, CA 93106 USA
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2007年 / 1卷 / 03期
关键词：
12;
D O I：
10.1002/pssr.200701041
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transport measurements of p-type m-plane GaN films grown on low extended-defect density, free-standing m-plane (10 (1) over bar0) GaN substrates are presented. No significant anisotropy in in-plane mobility was found for hole concentrations between 2.45 x 10(17) and 8.7 x 10(18) cm(-3). Since faulted, heteroepitaxial m-plane films showed significant anisotropy in electron and hole mobility a microstructural feature with anisotropic distribution (basal plane stacking faults) is discussed as a possible source of anisotropic scattering in non-polar and semi-polar films. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：110 / 112
页数：3
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