In search of a Si/SiGe THz quantum cascade laser

被引：0

作者：

Paul, DJ ^{[1
]}

Townsend, P ^{[1
]}

Lynch, SA ^{[1
]}

Kelsall, RW ^{[1
]}

Ikonic, Z ^{[1
]}

Harrison, P ^{[1
]}

Norris, DJ ^{[1
]}

Liew, SL ^{[1
]}

Cullis, AG ^{[1
]}

Li, X ^{[1
]}

Zhang, J ^{[1
]}

Bain, N ^{[1
]}

Gamble, HS ^{[1
]}

Tribe, WR ^{[1
]}

Arnone, DD ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical con nement of the optical mode. A method of increasing the vertical con nement of the optical mode for a Si/SiGe quantum cascade laser is demonstrated using silicon-on-silicide technology. Such technology is used with epitaxial growth to demonstrate a strain-symmetrised 600 period Si/SiGe quantum cascade interwell emission and the polarisation is used to demonstrate the optical con nement. Electroluminescence is demonstrated at similar to 3 THz (similar to 100 mu m) from an interwell quantum cascade emitter structure. Calculated model overlap and waveguide losses for ridge waveguides are comparable to values from GaAs quantum cascade lasers demonstrated at terahertz frequencies.

引用

页码：143 / 146

页数：4

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