Controlling the growth interface shape in the growth of CdTe single crystals by the traveling heater method

被引：15
|
作者：
Dost, Sadik [1 ]
Liu, YongCai [1 ]
机构：
[1] Univ Victoria, Crystal Growth Lab, Victoria, BC V8W 3P6, Canada
来源：
COMPTES RENDUS MECANIQUE | 2007年 / 335卷 / 5-6期
关键词：
computation fluid mechanics; crystal growth; numerical analysis; interface shapes;
D O I：
10.1016/j.crme.2007.05.011
中图分类号：
O3 [力学];
学科分类号：
08 ; 0801 ;
摘要：
This article presents the results of a numerical simulation study carried out for controlling the growth interface shape in the THM (Traveling Heater Method) growth of CdTe single crystals. Applying different thermal boundary conditions and a crucible rotation, the optimum growth conditions for a desired interface shape were obtained. The simulation results show that by controlling the heat removal at the bottom of the crucible, a flatter (or slightly concave towards the crystal) growth interface can be maintained throughout the growth process. A crucible rotation rate of 5 rpm seems optimal for a favorable growth interface shape. To cite this article: S. Dost, Y.C. Liu, C. R. Mecanique 335 (2007). (C) 2007 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.
引用
收藏
页码：323 / 329
页数：7
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