Novel infrared detectors based on semiconductor quantum dots

被引：0
|
作者：
Chen, ZH [1 ]
Kim, ET [1 ]
Ye, ZM [1 ]
Campbell, JC [1 ]
Madhukar, A [1 ]
机构：
[1] CUNY Brooklyn Coll, Dept Phys, Brooklyn, NY 11210 USA
来源：
CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews recent progresses in developing self-assembled InAs/GaAs quantum dots based infrared photodetectors, especially, with n-i(QDs)-n configuration.
引用
收藏
页码：237 / 238
页数：2
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