Surface Selectively Deposited Organic Single-crystal Transistor Arrays with High Device Performance

被引：3
|
作者：
Li, Yun [1 ]
Liu, Chuan [1 ]
Kumatani, Akichika [1 ]
Darmawan, Peter [1 ]
Minari, Takeo [1 ]
Tsukagoshi, Kazuhito [1 ,2 ]
机构：
[1] Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
[2] Japan Sci & Technol Agcy JST, Core Res Evolut Sci & Technol CREST, Kawaguchi, Saitama 3320012, Japan
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2012年 / 566卷
关键词：
Surface selectively deposition; organic single crystals; organic field-effect transistor; solvent-vapor annealing; SEMICONDUCTORS; TRANSPORT; STAMPS;
D O I：
10.1080/15421406.2012.703812
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A method for patterning organic single-crystal transistor arrays via surface selective deposition is presented. Solvent-vapor annealing is applied for the formation of organic crystals under ambient conditions. The devices are fabricated with a dual-gate structure, which allows the investigation of device performances of bottom-gate/top-contact (BG/TC) and top-gate/top-contact (TG/TC) structures based on the same crystals. The resulting BG/TC devices exhibit the field-effect mobility (mu(FET)) up to 3.5 cm(2)/Vs. And mu(FET) is influenced by the contact resistance, resulting in large variation in device performance. On the other hand, TG/TC structure exhibits better performance with smaller variation. The highest mu(FET) is 7.4 cm(2)/Vs.
引用
收藏
页码：13 / 17
页数：5
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