Structural Dependence of Grain Boundary Resistivity in Copper Nanowires

被引：9

作者：

Kim, Tae-Hwan ^{[1
]}

Nicholson, Don M. ^{[2
]}

Zhang, X. -G. ^{[1
,2
]}

Evans, Boyd M. ^{[3
]}

Kulkarni, Nagraj S. ^{[3
]}

Kenik, Edward A. ^{[4
]}

Meyer, Harry M. ^{[4
]}

Radhakrishnan, Balasubramaniam ^{[2
]}

Li, An-Ping ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[2] Oak Ridge Natl Lab, Div Math & Comp Sci, Oak Ridge, TN 37831 USA

[3] Oak Ridge Natl Lab, Measurement Sci & Syst Engn Div, Oak Ridge, TN 37831 USA

[4] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 08期

关键词：

ELECTRICAL-RESISTIVITY; POLYCRYSTALLINE FILMS; EXTERNAL SURFACES; REFLECTION; CONDUCTIVITY; SCATTERING; NANOFILMS; TRANSPORT; METALS; MODEL;

D O I：

10.1143/JJAP.50.08LB09

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the direct measurement of individual grain boundary (GB) resistances and the critical role of GB structure in the increased resistivity in copper nanowires. By measuring both intra-and inter-grain resistance with a four-probe scanning tunneling microscope, large resistance jumps are revealed owing to successive scattering across high-angle random GBs, while the resistance changes at twin and other coincidence boundaries are negligibly small. The impurity distributions in the nanowires are characterized in correlating to the microstructures. The resistance of high symmetry coincidence GBs and the impurity contributions are then calculated using a first-principle method which confirms that the coincidence GBs have orders of magnitude smaller resistance than the high-angle random GBs. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

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