Angular effect in laser removal of spherical silica particles from silicon wafers

被引:12
|
作者
Zheng, YW
Lu, YF
Song, WD
机构
[1] Natl Univ Singapore, Dept Elect Engn, Laser Microproc Lab, Singapore 119260, Singapore
[2] Natl Univ Singapore, Data Storage Inst, Singapore 119260, Singapore
关键词
D O I
10.1063/1.1359154
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, laser cleaning efficiencies to remove 2.5 mum particles have been investigated with different incident angles ranging from 0 degrees to 60 degrees. It is found that when the laser light irradiated normally to the substrate surface, the particle could be removed most efficiently. In this direction, the cleaning efficiency was also most sensitive to the light intensity. A sharp drop of cleaning efficiency occurred with a small change of the incident angle. Theoretical calculations based on the Lorentz-Mie theory and an accurate solution of the boundary problem, indicate that the light intensity near the contacting point is sensitive to the incident angle even though the incident light is uniform. (C) 2001 American Institute of Physics.
引用
收藏
页码:59 / 63
页数:5
相关论文
共 50 条
  • [21] Angular laser cleaning for effective removal of particles. from a solid surface
    J.M. Lee
    K.G. Watkins
    W.M. Steen
    Applied Physics A, 2000, 71 : 671 - 674
  • [22] Organization of silica spherical particles into different shapes on silicon substrates
    Korusiewicz, B.
    Maruszewski, K.
    MATERIALS SCIENCE-POLAND, 2007, 25 (03): : 835 - 841
  • [23] Universal threshold for the steam laser cleaning of submicron spherical particles from silicon
    Mosbacher, M.
    Dobler, V.
    Boneberg, J.
    Leiderer, P.
    Applied Physics A: Materials Science and Processing, 2000, 70 (06): : 669 - 672
  • [24] Universal threshold for the steam laser cleaning of submicron spherical particles from silicon
    Mosbacher, M
    Dobler, V
    Boneberg, J
    Leiderer, P
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (06): : 669 - 672
  • [25] Universal threshold for the steam laser cleaning of submicron spherical particles from silicon
    M. Mosbacher
    V. Dobler
    J. Boneberg
    P. Leiderer
    Applied Physics A, 2000, 70 (6) : 669 - 672
  • [26] Excimer laser induced removal of particles from hydrophilic silicon surfaces
    Wu, X
    Sacher, E
    Meunier, M
    JOURNAL OF ADHESION, 1999, 70 (1-2): : 167 - 178
  • [27] Chemical effect on the material removal rate in the CMP of silicon wafers
    Wang, Y. G.
    Zhang, L. C.
    Biddut, A.
    WEAR, 2011, 270 (3-4) : 312 - 316
  • [28] Chemical Effect on the Material Removal Rate in the CMP of Silicon Wafers
    Wang, Yongguang
    Zhang, L. C.
    Biddut, Altabul
    ADVANCES IN ABRASIVE TECHNOLOGY XIII, 2010, 126-128 : 511 - 514
  • [29] DISLOCATION NETWORKS IN SILICON-WAFERS LASER-FUSED TO SILICA SUBSTRATES
    GEYSELAERS, ML
    READER, AH
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 575 - 580
  • [30] Femtosecond laser-induced removal of silicon nitride layers from doped and textured silicon wafers used in photovoltaics
    Bonse, J.
    Mann, G.
    Krueger, J.
    Marcinkowski, M.
    Eberstein, M.
    THIN SOLID FILMS, 2013, 542 : 420 - 425