Moire Method for Nanoprecision Wafer-to-Wafer Alignment: Theory, Simulation and Application

被引：0

作者：

Wang, Chenxi ^{[1
]}

Suga, Tadatomo ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

2009 INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2009) | 2009年

关键词：

HIGH-PRECISION ALIGNMENT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The two dimensional (2D) moire centrosymmetric grating is developed to assist realization of high-precision wafer-to-wafer alignment and non-destructive measurement of misalignments for wafer bonding. Using these moire patterns the misalignments in the order of +/- 64 nm in X-Y axis can be resolved by a simple IR microscopy (5x objective) images. This value can be further improved to sub-10 nm range if the sub-pixel estimation is performed. For current status, the limit of the minimum resolved misalignment using moire gratings is similar to 0.2 nm according to theoretical analysis. It can be applied for not only the future 3D integration of wafer-scale, but also the fabrication of 3D nanostructures and advanced lithography techniques.

引用

页码：143 / 148

页数：6

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