Intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures

被引：22
|
作者：
Ohtani, K [1 ]
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 10期
关键词：
D O I：
10.1063/1.123566
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Intersubband electroluminescence in InAs quantum wells embedded in InAs/GaSb/AlSb type-II cascade structures is reported. The observed emission energy is in good agreement with calculation based on the multiband k . p theory. Dominant polarization of the emitted light is perpendicular to the quantum well layers. Difference in the spectrum shape between intersubband and interband cascade transitions is also presented. (C) 1999 American Institute of Physics. [S0003-6951(99)01210-3].
引用
收藏
页码：1409 / 1411
页数：3
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