Photoluminescence spectroscopy of many-body effects in heavily doped AlxGa1-xAs -: art. no. 233204

被引:4
|
作者
Sarkar, N [1 ]
Ghosh, S [1 ]
机构
[1] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
关键词
D O I
10.1103/PhysRevB.71.233204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an experimental investigation of heavy doping-induced many-body effects such as band gap narrowing and Fermi-edge singularity (FES) in AlxGa1-xAs using photoluminescence (PL) spectroscopy. The band-to-band transition energy shifts to lower energies and the FES feature in PL spectra grows with increasing electron concentration. We show that the FES feature is a nonmonotonic function of temperature and excitation intensity. Our data lead us to suggest that a small concentration of nonequilibrated holes is required to enhance the FES feature in the PL spectra.
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页数:4
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