Photoluminescence spectroscopy of many-body effects in heavily doped AlxGa1-xAs -: art. no. 233204

被引:4
|
作者
Sarkar, N [1 ]
Ghosh, S [1 ]
机构
[1] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India
关键词
D O I
10.1103/PhysRevB.71.233204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an experimental investigation of heavy doping-induced many-body effects such as band gap narrowing and Fermi-edge singularity (FES) in AlxGa1-xAs using photoluminescence (PL) spectroscopy. The band-to-band transition energy shifts to lower energies and the FES feature in PL spectra grows with increasing electron concentration. We show that the FES feature is a nonmonotonic function of temperature and excitation intensity. Our data lead us to suggest that a small concentration of nonequilibrated holes is required to enhance the FES feature in the PL spectra.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Photoluminescence of biased GaAs/AlxGa1-xAs double quantum wells -: many-body effects
    Zvára, M
    Grill, R
    Hlídek, P
    Orlita, M
    Soubusta, J
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 12 (1-4): : 335 - 339
  • [2] Optical phonons in AlxGa1-xAs:: Raman spectroscopy -: art. no. 155202
    Lockwood, DJ
    Wasilewski, ZR
    PHYSICAL REVIEW B, 2004, 70 (15) : 155202 - 1
  • [3] SPECTROSCOPIC INVESTIGATION OF MANY-BODY EFFECTS IN GAAS/ALXGA1-XAS SUPERLATTICES
    CINGOLANI, R
    CHEN, Y
    PLOOG, K
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1988, 10 (05): : 529 - 545
  • [4] Many-body effects in highly acceptor-doped GaAs/AlxGa1-xAs quantum wells
    Holtz, PO
    Ferreira, AC
    Sernelius, BE
    Buyanov, A
    Monemar, B
    Mauritz, O
    Ekenberg, U
    Sundaram, M
    Campman, K
    Merz, JL
    Gossard, AC
    PHYSICAL REVIEW B, 1998, 58 (08): : 4624 - 4628
  • [5] Fermi-edge singularities in AlxGa1-xAs quantum wells:: Extrinsic versus many-body scattering processes -: art. no. 249903
    Mélin, T
    Laruelle, F
    PHYSICAL REVIEW LETTERS, 2001, 87 (24)
  • [6] PHOTOLUMINESCENCE OF GE-DOPED ALXGA1-XAS
    OELGART, G
    SCHWABE, R
    FIESELER, H
    JACOBS, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (09) : 943 - 950
  • [7] PHOTOLUMINESCENCE OF ZN-DOPED ALXGA1-XAS
    OELGART, G
    HEILMANN, R
    SCHWABE, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (12) : 1159 - 1166
  • [8] Quantum interference in intentionally disordered doped GaAs/AlxGa1-xAs superlattices -: art. no. 035323
    Chiquito, AJ
    Pusep, YA
    Gusev, GM
    Toropov, AI
    PHYSICAL REVIEW B, 2002, 66 (03) : 1 - 7
  • [9] Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
    Wongmanerod, S
    Sernelius, BE
    Holtz, PO
    Monemar, B
    Mauritz, O
    Reginski, K
    Bugajski, M
    PHYSICAL REVIEW B, 2000, 61 (04): : 2794 - 2798
  • [10] Optical characterizations of heavily doped p-type AlxGa1-xAs and GaAs epitaxial films at terahertz frequencies -: art. no. 093529
    Hu, ZG
    Rinzan, MBM
    Matsik, SG
    Perera, AGU
    Von Winckel, G
    Stintz, A
    Krishna, S
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)