Effect of light ion irradiation on the flux dynamics of YBa2Cu3O7-δ thin films

被引:1
|
作者
Arias, D [1 ]
Sefrioui, Z
Gonzalez, EM
Villegas, JE
Santamaria, J
Vicent, JL
机构
[1] Univ Complutense, Fac CC Fis, Dept Fis Aplicada 3, E-28040 Madrid, Spain
[2] Univ Complutense, Fac CC Fis, Dept Fis Mat, E-28040 Madrid, Spain
关键词
critical currents; light ion irradiation; point defects; thin films;
D O I
10.1109/77.919932
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin films of 123 cuprates (YBa2Cu3O7) grown by DC sputtering are irradiated with light ion (He+) at 80 keV and with doses in the range 10(14) -10(15) cm(-2). The point disorder defects, due to light ion irradiation, cause a systematic decrease of the critical temperature. The effect of light ion irradiation on the vortex phase behavior is explored by critical currents from transport and magnetization loops (solid vortex phase) and resistivity (liquid state) in perpendicular fields. Although point disorder does not significantly affect dissipation in the solid state, the dissipation in the liquid is governed by plastic deformation of vortices favored by point disorder pinning.
引用
收藏
页码:3928 / 3930
页数:3
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