Defect formation in ZnTe and (Cd,Zn)Te epitaxial layers grown on (001) GaAs

被引：0
|
作者：
Loginov, YY [1 ]
Brown, PD [1 ]
Humphreys, CJ [1 ]
机构：
[1] UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3QZ,ENGLAND
来源：
INORGANIC MATERIALS | 1996年 / 32卷 / 01期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：22 / 25
页数：4
相关论文
共 50 条
  • [1] OPTICAL GAIN IN ZNTE/GAAS EPITAXIAL LAYERS GROWN BY MOVPE
    MAJUMDER, FA
    KALT, H
    KLINGSHIRN, C
    NAUMOV, A
    STANZL, H
    GEBHARDT, W
    JOURNAL OF LUMINESCENCE, 1994, 60-1 : 12 - 15
  • [2] CRYSTALLOGRAPHIC DEFECTS IN (001) GAAS EPITAXIAL LAYERS GROWN BY MOCVD
    VANDEVEN, J
    WEYHER, JL
    IKINK, H
    GILING, LJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 989 - 997
  • [3] Structural properties of ZnTe/Zn(S,Te)-superlattices grown by molecular beam epitaxy on (001)GaAs-substrates
    Korn, M
    Gerhard, T
    Ress, HR
    Albert, D
    Gerhard, A
    Schumacher, C
    Faschinger, W
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 62 - 65
  • [4] Dislocations in MBE-grown ZnSe/GaAs(001) epitaxial layers
    Vidal, MA
    Constantino, ME
    Salazar-Hernández, B
    Navarro-Contreras, H
    López-López, M
    Hernández-Calderón, I
    Yonezu, H
    DEFECT AND DIFFUSION FORUM, 1999, 174 : 31 - 44
  • [5] FORMATION OF THE ZNTE/(001) GAAS INTERFACE
    TATARENKO, S
    CIBERT, J
    SAMINADAYAR, K
    JOUNEAU, PH
    ETGENS, VH
    SAUVAGESIMKIN, M
    PINCHAUX, R
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 339 - 342
  • [6] Characterization of epitaxial ZnTe layers grown on GaAs substrates by transmission electron microscopy and photoluminescence
    Zhang, Fabi
    Ikoma, Yoshifumi
    Zhang, Jinping
    Xu, Ke
    Saito, Katsuhiko
    Guo, Qixin
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (02):
  • [7] Photoluminescence of various Zn1-xCdxTe/ZnTe heterostructures grown by MBE on GaAs(001) and ZnTe(001) substrates:: temperature dependences
    Bagaev, VS
    Zaitsev, VV
    Onishchenko, EE
    Sadofyev, YG
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 250 - 254
  • [8] The Energy State of Epitaxial Layers in a Multilayer Heterostructure, Grown on a (001)GaAs Substrate
    A. N. Aleshin
    A. S. Bugaev
    O. A. Ruban
    V. V. Saraikin
    N. Yu. Tabachkova
    I. V. Shchetinin
    Crystallography Reports, 2020, 65 : 138 - 146
  • [9] The Energy State of Epitaxial Layers in a Multilayer Heterostructure, Grown on a (001)GaAs Substrate
    Aleshin, A. N.
    Bugaev, A. S.
    Ruban, O. A.
    Saraikin, V. V.
    Tabachkova, N. Yu
    Shchetinin, I., V
    CRYSTALLOGRAPHY REPORTS, 2020, 65 (01) : 138 - 146
  • [10] MULTIPLE TWINNING IN GAAS EPITAXIAL LAYERS GROWN ON SI(001) AND SI(111)
    NEETHLING, JH
    ALBERTS, V
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) : 3435 - 3440
12345