Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd2O3 thin films

被引:3
|
作者
Wellenius, Patrick [1 ]
Smith, Eric R. [2 ]
Wu, Pae C. [3 ]
Everitt, Henry O. [3 ,4 ]
Muth, John F. [1 ]
机构
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA
[2] Kratos Def & Secur Solut Inc, Huntsville, AL 35805 USA
[3] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
[4] USA, Aviat & Missile RD&E Ctr, Redstone Arsenal, AL 35898 USA
关键词
gadolinium oxide; photoluminescence; pulsed laser deposition; MONOCLINIC GD2O3; UP-CONVERSION; NANOCRYSTALS; EXCITATION; PHOSPHORS; MODEL;
D O I
10.1002/pssa.201026071
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Europium-doped gadolinium oxide (Gd2O3) thin films were deposited on sapphire substrates by pulsed laser deposition (PLD). The effect of oxygen pressure during deposition on the structure of the thin films, investigated by transmission electron microscopy (TEM) and X-ray diffraction (XRD), was correlated to photoluminescence spectra. The polycrystalline films, like the one deposited in 5 mTorr oxygen environment, were primarily monoclinic phase; however the rarer cubic phase was achieved at 50 mTorr pressure. Time-integrated and time-resolved photoluminescence (TIPL and TRPL) spectra of the bright D-5(0) to F-7(2) radiative transition revealed how the differing host material phases altered the local environment of the Eu dopants. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1949 / 1953
页数:5
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