Effect of oxygen pressure on the structure and luminescence of Eu-doped Gd2O3 thin films

被引:3
|
作者
Wellenius, Patrick [1 ]
Smith, Eric R. [2 ]
Wu, Pae C. [3 ]
Everitt, Henry O. [3 ,4 ]
Muth, John F. [1 ]
机构
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA
[2] Kratos Def & Secur Solut Inc, Huntsville, AL 35805 USA
[3] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
[4] USA, Aviat & Missile RD&E Ctr, Redstone Arsenal, AL 35898 USA
关键词
gadolinium oxide; photoluminescence; pulsed laser deposition; MONOCLINIC GD2O3; UP-CONVERSION; NANOCRYSTALS; EXCITATION; PHOSPHORS; MODEL;
D O I
10.1002/pssa.201026071
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Europium-doped gadolinium oxide (Gd2O3) thin films were deposited on sapphire substrates by pulsed laser deposition (PLD). The effect of oxygen pressure during deposition on the structure of the thin films, investigated by transmission electron microscopy (TEM) and X-ray diffraction (XRD), was correlated to photoluminescence spectra. The polycrystalline films, like the one deposited in 5 mTorr oxygen environment, were primarily monoclinic phase; however the rarer cubic phase was achieved at 50 mTorr pressure. Time-integrated and time-resolved photoluminescence (TIPL and TRPL) spectra of the bright D-5(0) to F-7(2) radiative transition revealed how the differing host material phases altered the local environment of the Eu dopants. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1949 / 1953
页数:5
相关论文
共 50 条
  • [1] Color emission and dielectric properties of Eu-doped Gd2O3 gate oxide thin films
    Choi, Sungho
    Park, Byung-Yoon
    Ahn, Taek
    Kim, Ji Young
    Hong, Chang Seop
    Yi, Mi Hye
    Jung, Ha-Kyun
    THIN SOLID FILMS, 2011, 519 (10) : 3272 - 3275
  • [2] Effect of the oxygen concentration on the properties of Gd2O3 thin films
    Li, YL
    Chen, NF
    Zhou, JP
    Song, SL
    Liu, LF
    Yin, ZG
    Cai, CL
    JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) : 548 - 552
  • [3] Luminescence properties of Gd2O3:Eu3+ sol-gel thin films
    Gu, M
    Qiu, LQ
    Liu, XL
    Zhang, R
    Xu, X
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2005, 25 (08) : 1190 - 1194
  • [4] Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films
    Liu, QL
    Bando, Y
    Xu, FF
    Tang, CC
    APPLIED PHYSICS LETTERS, 2004, 85 (21) : 4890 - 4892
  • [5] Investigation on Eu3+-doped Gd2O3 sol-gel thin films
    Liu, XL
    Qiu, LQ
    Gu, M
    Zhang, R
    Xu, X
    FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2004, 5774 : 628 - 632
  • [6] Temperature luminescence properties of Eu3+-doped Gd2O3 phosphors
    Nikolic, M. G.
    Al-Juboori, A. Z.
    Dordevic, V.
    Dramicanin, M. D.
    PHYSICA SCRIPTA, 2013, T157
  • [7] Highly enhanced photoluminescence and X-ray excited luminescence of Li doped Gd2O3:Eu3+ thin films
    Liu, XL
    Liu, BJ
    Gu, M
    Xiao, LH
    Xu, X
    SOLID STATE COMMUNICATIONS, 2006, 137 (03) : 162 - 165
  • [8] Structure and luminescence of HfO2-codoped Gd2O3:Eu phosphors
    Ji, Y. M.
    Jiang, D. Y.
    Shi, J. L.
    JOURNAL OF LUMINESCENCE, 2007, 122 : 984 - 986
  • [9] Effect of Li+ on the luminescence properties of Gd2O3:Eu phosphor
    Park, JK
    Kim, JM
    Kim, KN
    Kim, CH
    Park, HD
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (10) : H39 - H41
  • [10] Effect of Oxygen flow on the Structure and Optical Properties of the Gd2O3 Optical Films
    Wang, Siyu
    Ma, Ping
    Pu, Yunti
    Qiao, Zhao
    Zhang, Mingxiao
    Lu, Zhongwen
    Peng, Dongxu
    ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, 2016, 9683