Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage

The single event effects (SEE) in commercial Ferroelectric Random Access Memory (FRAM) were investigated using heavy-ion and pulsed laser. Stable data upsets affecting one to several rows and transient data upsets affecting hundreds to even thousands of rows were both observed, and the corresponding sensitive regions were identified. Further research provides evidence that the transient micro-latch-up event in the peripheral circuits based on complementary metal oxide semiconductor (CMOS) process is a main cause of the transient data upsets. Moreover, neutron irradiation is performed in order to mitigate the upsets caused by transient micro-latch-up. Due to the reduction of the current gains of the parasitic bipolar transistors by neutron-induced displacement damage, transient micro-latch-up as well as the resulting data upsets was suppressed.