The oxidation and the electrical properties of Ni-Cr thin film after rapid thermal annealing

被引：5
|
作者：
Yan, Jianwu [1 ,2 ]
Zhou, Jicheng [1 ]
机构：
[1] Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Peoples R China
[2] NanChang Inst Technol, Dept Mech & Power Engn, Nanchang 330099, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2007年 / 21卷 / 26期
基金：
中国国家自然科学基金;
关键词：
magnetron sputtering; Ni-Cr thin film; rapid thermal annealing; TCR; oxidation;
D O I：
10.1142/S0217979207037934
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By controlling the sputtering power, rotational speed of the substrate and sputtering time, Ni-Cr thin films with appropriate composition were fabricated by double-target magnetron co-sputtering techniques. The homogeneity and oxidation of Ni-Cr thin film has been studied by Auger electron spectroscopy (AES). The structures of Ni-Cr thin films were determined by an X-ray diffractometer (XRD). The oxidation and the resistance stability of the Ni-Cr thin film after rapid thermal process (RTP) have been studied. The relations between TCR and RTP techniques of Ni-Cr thin films were discussed.
引用
收藏
页码：4561 / 4574
页数：14
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