Floating Gate Based Ultra High-Sensitivity Two-Terminal AlGaN/GaN HEMT Hydrogen Sensor

被引：0

作者：

Eliza, Sazia A. ^{[1
]}

Dutta, Achyut K. ^{[1
]}

机构：

[1] Banpil Photon Inc, Santa Clara, CA 95054 USA

来源：

ADVANCED ENVIRONMENTAL, CHEMICAL, AND BIOLOGICAL SENSING TECHNOLOGIES VII | 2010年 / 7673卷

关键词：

H-2; sensor; AlGaN/GaN HEMT; floating gate; high-sensitivity; extreme environment sensor; gas sensor; linear detection; Pt/AlGaN interface; GAN;

D O I：

10.1117/12.851536

中图分类号：

TP7 [遥感技术];

学科分类号：

081102 ; 0816 ; 081602 ; 083002 ; 1404 ;

摘要：

This paper presents the analytical performances of an AlGaN/GaN High Electron Mobility Transistor (HEMT) based sensor for the detection of H-2 gas. The model calculates the changes in drain-to-source current and sensitivity of the device due to adsorbed atomic density of gas at the gate terminal. Simulated results indicate that AlGaN/GaN HEMT based floating gate sensors are highly suitable for the extreme environment detection of various gases with concentration as low as similar to ppb level.

引用

页数：7

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