Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors

被引:11
|
作者
Sun, Jiandong [1 ]
Zhang, Zhipeng [1 ]
Li, Xiang [1 ,2 ]
Qin, Hua [1 ]
Sung, Yunfei [3 ]
Cai, Yong [1 ]
Yu, Guohao [1 ]
Zhang, Zhili [1 ]
Zhang, Jinfeng [1 ]
Yang Shangguan [1 ]
Jin, Lin [1 ]
Li, Xinxing [1 ]
Zhang, Baoshun [1 ]
Popov, V. V. [4 ]
机构
[1] Chinese Acad Sci, Suzhou Inst Nanotech & NanoBion SINANO, Key Lab Nanodevices & Applicat, 398 Ruoshui Rd, Suzhou 215123, Peoples R China
[2] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Suzhou 215123, Peoples R China
[3] Suzhou Univ Sci & Technol, Coll Elect & Informat Engn, Suzhou 215009, Peoples R China
[4] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Saratov Branch, Saratov 410019, Russia
基金
俄罗斯基础研究基金会;
关键词
IDENTIFICATION;
D O I
10.1063/1.5114682
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report an approach to make two-terminal antenna-coupled AlGaN/GaN high-electron-mobility-transistor self-mixing terahertz detectors. Fluorine ion implantation is used to increase the threshold voltage of the AlGaN/GaN two-dimensional electron gas. An optimal implantation dose can be reached so that the detector responsivity is maximized at zero gate voltage or with the gate floating. The relationship between the ion dosage and the threshold voltage, electron mobility, electron density, responsivity, and noise-equivalent power (NEP) is obtained. A minimum optical NEP of 47 pW/Hz is achieved from a two-terminal detector at 0.65 THz. The capability of two-terminal operation allows for the design of a large array of antenna-coupled high-electron-mobility transistor detectors without the demanding needs of routing negative gate voltage lines around the antenna array and minimizing the gate leakage current.
引用
收藏
页数:4
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