InP plus CMOS Heterogeneous Integration for The Next Generation of Wireless

被引：0
|
作者：
Collaert, Nadine [1 ]
Peeters, Michael [1 ]
机构：
[1] IMEC, Leuven, Belgium
来源：
MICROWAVE JOURNAL | 2022年 / 65卷 / 11期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Early discussions of the capabilities that will enable 6G envision materials and devices operating above 100 GHz. Indium phosphide (InP) is one semiconductor technology with the characteristics to achieve the required speed, efficiency and output power for sub-THz frequencies. To serve global wireless markets, InP process technology must be commercialized to maintain the performance advantages while able to be mass produced at the requisite prices to meet market needs. To develop InP into a mature technology, imec is researching nano-ridge engineering to grow InP on Si. Then, to integrate all the semiconductor components into a multi-function communications circuit, imec is exploring printed circuit board (PCB), 2.5D and 3D packaging technologies.
引用
收藏
页码：50 / 56
页数：7
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