Fluorescence EXAFS analysis of nanoscale zinc-blende MnAs dots grown on GaAs(001) by molecular beam epitaxy

被引:1
|
作者
Ofuchi, H. [1 ]
Okabayashi, J. [2 ]
Mizuguchi, M. [2 ,3 ]
Yamada, M. [2 ]
Ono, K. [4 ]
Takeda, Y. [1 ]
Oshima, M. [2 ]
Akinaga, H. [3 ]
机构
[1] Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan
[3] SYNAF NRI AIST, Tsukuba, Ibaraki 3058562, Japan
[4] High Energy Accelerator Res Org, Inst Mat Struct Sci, Photon Factory, Tsukuba, Ibaraki 3050801, Japan
关键词
D O I
10.1238/Physica.Topical.115a00431
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this work, geometric structures for ferromagnetic nanoscale zinc-blende MnAs dots grown on a sulfur-passivated GaAs(001) were investigated by using fluorescence EXAFS measurement. EXAFS measurements revealed that MnAs dots grown on GaAs(001) substrate did not form NiAs-type structure but zinc-blende structure. The Mn-As bond length in the MnAs dots is about 2.48 angstrom, which is close to that which was estimated from lattice constant of zinc-blende MnAs obtained by density-functional calculations. Existence of zinc-blende MnS (beta-MnS) phase was also observed by EXAFS measurements.
引用
收藏
页码:431 / 432
页数:2
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