Research of DC-DC power supply for IGCT Gate Unit

被引：0

作者：

Li, Jianxu ^{[1
]}

Huang, Xianjin ^{[1
]}

Zhang, Liwei ^{[1
]}

Zheng, Trillion Q. ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Sch Elect Engn, Beijing 100044, Peoples R China

来源：

ICIEA 2008: 3RD IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS, PROCEEDINGS, VOLS 1-3 | 2008年

关键词：

D O I：

10.1109/ICIEA.2008.4582823

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The Integrated Gate Commutated Thyristor (IGCT), a new high frequency, high power semiconductor, has been applied in more and more Medium Voltage Industrial areas because it combines the advantages of IGBT and GTO. IGCT integrates a standard Gate Unit, so the Gate Unit power supply's output as well as its supply cable has to withstand the high voltage of the power semiconductor. As a result, there are strict requirements of DC-DC power supply for the Gate Unit, such as high output voltage precision, over / under voltage protection and optical control interface which are all introduced in this paper. At the same time, we analyze DC-DC converter's forward topology, pulse generator, transformer, voltage stabilizer and offer some measured waves to prove its well performance.

引用

页码：1766 / 1769

页数：4

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