Gallium nitride : Synthesis and characterization

被引：0

作者：

Adhikary, Kalyan ^{[1
]}

Chaudhuri, Subhadra ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, India

来源：

TRANSACTIONS OF THE INDIAN CERAMIC SOCIETY | 2007年 / 66卷 / 01期

关键词：

gallium nitride; GaN thin film; nanocrystallites of GaN; nanostructured semiconductor and GaN nanorods;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This review article presents the synthesis and important properties of bulk, thin film and different nanoforms of GaN. The nanoforms include nanocrystalline powder, nanowires and nanorods. The preparation and critical aspects of p-type and n-type GaN has been discussed in detail as the semiconducting proterties of this material have already been utilized in the industries for the fabrication of optoelectronic devices. Discussion in relation to improvement of light emitting diode application and some other probable applications based on typical properties of pure and doped GaN have been made.

引用

页码：1 / 16

页数：16

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