Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions -: art. no. 111105

被引：66
|
作者：
Löffler, A
Reithmaier, JP
Sek, G
Hofmann, C
Reitzenstein, S
Kamp, M
Forchel, A
机构：
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 11期
关键词：
D O I：
10.1063/1.1880446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vertical-emitting AlAs/GaAs microcavity pillars with a type of GaInAs quantum dots within a one lambda cavity have been realized based on high reflectivity distributed Bragg reflectors. High-quality factors were achieved due to an improved fabrication technology with a maximum quality factor of 27 700 for a micropillar with a diameter of 4 mu m. The dot dimensions could be enlarged by one order of magnitude using a low strain Ga0.7In0.3As nucleation layer. (C) 2005 American Institute of Physics.
引用
收藏
页码：1 / 3
页数：3
相关论文
共 50 条
  • [31] High-quality quantum point contacts in GaN/AlGaN heterostructures -: art. no. 073108
    Chou, HT
    Lüscher, S
    Goldhaber-Gordon, D
    Manfra, MJ
    Sergent, AM
    West, KW
    Molnar, RJ
    APPLIED PHYSICS LETTERS, 2005, 86 (07) : 1 - 3
  • [32] Kinetic Monte Carlo simulation of the temperature dependence of semiconductor quantum dot growth - art. no. 68240B
    Zhao, Chang
    Zhao, Man
    Wang, Yi
    Wu, Guang Ming
    SEMICONDUCTOR LASERS AND APPLICATIONS III, 2008, 6824 : B8240 - B8240
  • [33] All optical logic performance of quantum dot semiconductor amplifier based devices - art. no. 61151H
    Sun, H.
    Wang, Q.
    Dong, H.
    Dutta, N. K.
    Physics and SImulation of Optoelectronic Devices XIV, 2006, 6115 : H1151 - H1151
  • [34] Transport through a quantum wire with a side quantum-dot array -: art. no. 085321
    Orellana, PA
    Domínguez-Adame, F
    Gómez, I
    de Guevara, MLL
    PHYSICAL REVIEW B, 2003, 67 (08)
  • [35] Flux-quantum-modulated Kondo conductance in a multielectron quantum dot -: art. no. 161305
    Fühner, C
    Keyser, UF
    Haug, RJ
    Reuter, D
    Wieck, AD
    PHYSICAL REVIEW B, 2002, 66 (16)
  • [36] Comment on "Single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity" -: art. no. 229701
    Gayral, B
    Gérard, JM
    PHYSICAL REVIEW LETTERS, 2003, 90 (22)
  • [37] Coupling semiconductor nanocrystals to a fused-silica microsphere:: a quantum-dot microcavity with extremely high Q factors
    Fan, XD
    Palinginis, P
    Lacey, S
    Wang, HL
    Lonergan, MC
    OPTICS LETTERS, 2000, 25 (21) : 1600 - 1602
  • [38] High Q (33000) all-epitaxial microcavity for quantum dot vertical-cavity surface-emitting lasers and quantum light sources -: art. no. 031107
    Muller, A
    Shih, CK
    Ahn, J
    Lu, D
    Gazula, D
    Deppe, DG
    APPLIED PHYSICS LETTERS, 2006, 88 (03) : 1 - 3
  • [39] Selective coherent destruction of tunneling in a quantum-dot array -: art. no. 041302
    Villas-Bôas, JM
    Ulloa, SE
    Studart, N
    PHYSICAL REVIEW B, 2004, 70 (04): : 041302 - 1
  • [40] Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot -: art. no. 161305
    Finley, JJ
    Fry, PW
    Ashmore, AD
    Lemaître, A
    Tartakovskii, AI
    Oulton, R
    Mowbray, DJ
    Skolnick, MS
    Hopkinson, M
    Buckle, PD
    Maksym, PA
    PHYSICAL REVIEW B, 2001, 63 (16)
12345