A CMOS active pixel sensor for charged particle detection

被引：0

作者：

Matis, HS ^{[1
]}

Bieser, F ^{[1
]}

Kleinfelder, S ^{[1
]}

Rai, G ^{[1
]}

Retiere, F ^{[1
]}

Ritter, HG ^{[1
]}

Singh, K ^{[1
]}

Wurzel, SE ^{[1
]}

Wieman, H ^{[1
]}

Yamamoto, E ^{[1
]}

机构：

[1] Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

2002 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-3 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 mum. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe-55 exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector.

引用

页码：259 / 263

页数：5

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