Investigation on the Galvanic Corrosion of Copper during Chemical Mechanical Polishing of Ruthenium Barrier Layer

被引:0
|
作者
Jiang, Liang [1 ]
He, Yongyong [1 ]
Lu, Xinchun [1 ]
Luo, Jianbin [1 ]
机构
[1] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
来源
2014 INTERNATIONAL CONFERENCE ON PLANARIZATION/CMP TECHNOLOGY (ICPT) | 2014年
关键词
Chemical mechanical polishing; galvanic corrosion; copper; ruthenium barrier layer; SODIUM PERIODATE; THIN-FILM; GUANIDINE CARBONATE; POTASSIUM PERIODATE; DIFFUSION BARRIER; PLANARIZATION; OXIDATION; SLURRY; GLYCINE; CMP;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the development of ultra-large scale integrated circuits, ruthenium has been used as one of the most promising barrier materials for copper interconnects by replacing the conventional Ta/TaN bilayer film. However, during the polishing process of Ru/Cu structure using KIO4 slurries, the galvanic corrosion of copper could happen due to the large difference of the corrosion potentials between ruthenium and copper. This paper investigates the galvanic corrosion of copper of the Ru/Cu galvanic couple in KIO4-based slurries. The results reveal that, in KIO4 slurries without the addition of effective inhibitors, the galvanic corrosion of copper can greatly accelerate the oxidation and the corrosion of copper, and as a result, more reaction products, such as Cu(IO4)(2)/Cu(IO3)(2) and CuO, can be rapidly formed on the copper surface, by which the material removal rate (MRR) of copper increases and the defects of copper could be aggravated. According to the theory of galvanic corrosion, two types of methods for controlling the galvanic corrosion of copper are proposed, i.e. the 1st one is using other oxidizer instead and the 2nd one is adding appropriate inhibitors. For the 1st method, KIO3 is used for demonstration and the effectiveness is verified. For the 2nd method, the combination of benzotriazole (BTA) and a non-ionic surfactant is tested. With the addition of BTA and the non-ionic surfactant, the theoretical galvanic current density decreases by one order of magnitude, and the MRR of copper slightly decreases after copper is connected to ruthenium to form a Ru/Cu galvanic couple. The passivation mechanism of BTA and the non-ionic surfactant on the copper surface can be proposed as follows: firstly the added BTA can form hydrophobic Cu-BTA complex on the copper surface; then the hydrophobic polypropylene oxide segments of the non-ionic surfactant can be effectively absorbed on the hydrophobic Cu-BTA complex as a supplement. These two parts are integrated as a complete passivating film on the copper surface to protect it from corrosion and excessive mechanical abrasion.
引用
收藏
页码:209 / 216
页数:8
相关论文
共 50 条
  • [31] Investigation of copper scratches and void defects after chemical mechanical polishing
    Hung, Chi-Cheng
    Lee, Wen-Hsi
    Chang, Shih-Chieh
    Wang, Ying-Lang
    Hwang, Gwo-Jen
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (09) : 7073 - 7075
  • [32] Investigation of copper scratches and void defects after chemical mechanical polishing
    Hung, Chi-Cheng
    Lee, Wen-Hsi
    Chang, Shih-Chieh
    Wang, Ying-Lang
    Hwang, Gwo-Jen
    Japanese Journal of Applied Physics, 2008, 47 (9 PART 1): : 7073 - 7075
  • [33] Investigation of Percarbonate Based Slurry Chemistry for Controlling Galvanic Corrosion during CMP of Ruthenium
    Turk, M. C.
    Rock, S. E.
    Amanapu, H. P.
    Teugels, L. G.
    Roy, D.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (05) : P205 - P213
  • [34] Investigation of Guanidine Carbonate-Based Slurries for Chemical Mechanical Polishing of Ru/TiN Barrier Films with Minimal Corrosion
    Sagi, K. V.
    Amanapu, H. P.
    Teugels, L. G.
    Babu, S. V.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (07) : P227 - P234
  • [35] Characterization of chemical mechanical polishing of copper
    Wijekoon, K
    Tsai, S
    Bennett, D
    Redeker, F
    CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS, 2000, 99 (37): : 158 - 167
  • [36] Triple Synergism Effect of Ammonium Nitrilotriacetate on the Chemical Mechanical Polishing Performance of Ruthenium Barrier Layers
    He, Ziwei
    Zhou, Jianwei
    Qi, Yuhang
    Luo, Chong
    Wang, Chenwei
    Liu, Jianghao
    SMALL, 2024, 20 (26)
  • [37] Investigation of Copper Oxide Ring Formation during Post Chemical Mechanical Polishing Cleaning of Cu Interconnect
    Kim, Hojoong
    Hong, Seokjun
    Jin, Yinhua
    Lim, Dong Hyun
    Kim, Jun-yong
    Hwang, Hasub
    Kim, Taesung
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (08) : P542 - P546
  • [38] Galvanic corrosion inhibitors for Cu/Ru couple during chemical mechanical polishing of Ru (vol 7, p62, 2017)
    Cheng, Jie
    Wang, Tongqing
    Lu, Xinchun
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (04)
  • [39] Chemical mechanical polishing of copper layer employing MnO2 slurry
    Hara, T
    Balakumar, S
    THIN SOLID FILMS, 2004, 462 (SPEC. ISS.) : 186 - 191
  • [40] Dishing effects during chemical mechanical polishing of copper in acidic media
    Luo, Q
    Babu, SV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (12) : 4639 - 4644