Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot

被引：4
|
作者：
Khanin, Yu. N. [1 ]
Vdovin, E. E.
Eaves, L.
Larkin, I. A.
Patane, A.
Makarovskii, O. N.
Henini, M.
机构：
[1] Russian Acad Sci, Inst Microelect Technol & Ultra High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2007年 / 105卷 / 01期
基金：
英国工程与自然科学研究理事会; 俄罗斯基础研究基金会;
关键词：
73.21.-b; 73.40.Gk; 71.55.Eq;
D O I：
10.1134/S1063776107070333
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The results of the investigation of tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure containing InAs self-assembled quantum dots at low temperatures are reported. An anomalous increase in the tunneling current through the quantum dots has been observed in the presence of a magnetic field both parallel and perpendicular to the current. This increase is a manifestation of a Fermi-edge singularity appearing in the current due to the interaction of a tunneling electron with the electron gas in an emitter.
引用
收藏
页码：152 / 154
页数：3
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