Magnetic-field-induced quantum Hall - insulator transition and persistent photoconductivity in InAs/GaAs quantum dot layers

被引：1

作者：

Kulbachinskii, VA

Lunin, RA

Rogozin, VA

Kytin, VG

Zvonkov, BN

Nekorkin, SM

Filatov, DO

de Visser, A

机构：

[1] Moscow MV Lomonosov State Univ, Low Temp Phys Dept, Moscow 119899, Russia

[2] Univ Nizhny Novgorod, Phys Tech Res Inst, Nizhnii Novgorod 603600, Russia

[3] Univ Amsterdam, Van Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期

关键词：

quantum dots; Hall insulator; localization; persistent photoconductivity;

D O I：

10.1016/S1386-9477(02)00728-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the temperature dependence of resistance in the temperature range T = 0.07-300 K and in magnetic field up to 35 T in InAs/GaAs quantum dot layers. In samples with relatively high carrier concentration quantum Hall effect-insulator transition was observed in high magnetic fields. Two-dimensional Mott variable range hopping conductivity has been observed at low temperatures in samples with low carrier concentration. The length of localization correlates very well with the quantum dot cluster size obtained by atomic force microscope. In all samples a positive persistent photoconductivity was observed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：159 / 160

页数：2

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