Optical transmittance and reflectance studies and evidence of weak electron-phonon interaction in Type-I Ge clathrate Ba8Ga16Ge30

被引:2
|
作者
Udono, Haruhiko [1 ]
Imai, Motoharu [2 ]
Kojima, Shuhei [1 ]
Kume, Tetsuji [3 ]
Tanigaki, Katsumi [4 ]
Tajima, Hiroyuki [5 ]
机构
[1] Ibaraki Univ, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 3168511, Japan
[2] NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
[3] Gifu Univ, 1-1 Yanagido, Gifu, Gifu 5011193, Japan
[4] Tohoku Univ, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
[5] Univ Hyogo, 3-2-1 Kouto, Kamigori, Hyogo 67812971, Japan
基金
日本科学技术振兴机构;
关键词
TEMPERATURE-DEPENDENCE; ENERGY-GAP; ABSORPTION-EDGE; BAND-GAPS; SR8GA16GE30;
D O I
10.1063/1.4983076
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical properties of ternary type-I Ge clathrate Ba8Ga16Ge30 are investigated by optical reflectance and transmittance measurements. The refractive index and extinction coefficient are calculated from the reflectance spectrum via the modified Kramers-Kronig analysis method between 0.5 and 3.2 eV. The photon energy dependence of the optical absorption coefficient reveals that Ba8Ga16Ge30 is an indirect band gap semiconductor with a gap energy E-g of 0.69 eV at 5.7K and 0.66 eV at 285 K. The temperature dependence of E-g can be satisfactorily described by an equation based on the Bose-Einstein statistics model. When compared with those of common elemental, III-V, and II-VI semiconductors, the small temperature coefficient dE(g)/dT of the Ba8Ga16Ge30 can be considered to represent the weak electron-phonon interaction in the Ba8Ga16Ge30 clathrate. Published by AIP Publishing.
引用
收藏
页数:5
相关论文
共 50 条
  • [31] Preparation and characterization of Ba8Ga16Ge30/Sr8Ga16Ge30 core-shell single crystals
    Cai, K. F.
    Zhang, L. C.
    Lei, Q.
    Mueller, E.
    Stiewe, C.
    CRYSTAL GROWTH & DESIGN, 2006, 6 (08) : 1797 - 1800
  • [32] Electron spin resonance (ESR) of Eu2+ in type-I clathrate Eu8Ga16Ge30
    Holanda, L. M.
    Vargas, J. M.
    Rettori, C.
    Pagliuso, P. G.
    Bittar, E. M.
    Avila, M. A.
    Takabatake, T.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (19) : 3300 - 3303
  • [33] Large thermoelectric figure of merit at high temperature in Czochralski-grown clathrate Ba8Ga16Ge30
    Saramat, A.
    Svensson, G.
    Palmqvist, A.E.C.
    Stiewe, C.
    Mueller, E.
    Platzek, D.
    Williams, S.G.K.
    Rowe, D.M.
    Bryan, J.D.
    Stucky, G.D.
    Journal of Applied Physics, 2006, 99 (02): : 1 - 5
  • [34] Magnetic properties of Co-doped Eu8Ga16Ge30 type-I clathrate
    Liu, Lihua
    Zhang, Wei
    Liu, Peizhu
    Chen, Ning
    Li, Yang
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 502
  • [35] Thermal stability and thermoelectric properties of p-type Ba8Ga16Ge30 clathrates
    Cederkrantz, D.
    Saramat, A.
    Snyder, G. J.
    Palmqvist, A. E. C.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)
  • [36] Optical investigations of the clathrate α-Eu8Ga16Ge30
    J. Sichelschmidt
    V. Voevodin
    V. Pacheco
    Yu. Grin
    F. Steglich
    T. Nishi
    S. Kimura
    The European Physical Journal B - Condensed Matter and Complex Systems, 2005, 46 : 363 - 366
  • [37] Optical investigations of the clathrate α-Eu8Ga16Ge30
    Sichelschmidt, J
    Voevodin, V
    Pacheco, V
    Grin, Y
    Steglich, F
    Nishi, T
    Kimura, S
    EUROPEAN PHYSICAL JOURNAL B, 2005, 46 (03): : 363 - 366
  • [38] Carrier-tuning of single-crystalline Ba8Ga16Ge30
    Avila, M. A.
    Suekuni, K.
    Umeo, K.
    Takabatake, T.
    PHYSICA B-CONDENSED MATTER, 2006, 383 (01) : 124 - 125
  • [39] Synthesis and thermoelectric properties of single crystalline and polycrystalline Ba8Ga16Ge30
    Wang, H. F.
    Cai, K. F.
    Li, H.
    Yu, D. H.
    Wang, X.
    Zhou, C. W.
    Li, X. L.
    Wang, Y. Y.
    An, B. J.
    Du, Y.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 491 (1-2) : 684 - 688
  • [40] Nonstoichiometry and chemical purity effects in thermoelectric Ba8Ga16Ge30 clathrate (vol 92, pg 7281, 2002)
    Bryan, JD
    Blake, NP
    Metiu, H
    Stucky, GD
    Iversen, BB
    Poulsen, RD
    Bentien, A
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 4343 - 4343