Mechanical properties and fracture toughness of organo-silicate glass (OSG) low-k dielectric thin films for microelectronic applications

被引：67

作者：

Vella, JB ^{[1
]}

Adhihetty, IS

Junker, K

Volinsky, AA

机构：

[1] Motorola Inc, DigitalDNA TM Labs, Proc & Mat Characterizat Lab, Tempe, AZ 85284 USA

[2] Motorola Inc, Adv Prod Res & Dev Lab, Digital DNA TM Labs, Austin, TX 78721 USA

来源：

INTERNATIONAL JOURNAL OF FRACTURE | 2003年 / 119卷 / 4-2期

关键词：

adhesion; fracture toughness; low-k dielectrics; mechanical properties; thin films;

D O I：

10.1023/A:1024944316369

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The integration of chemical vapor deposited organo-silicate glass (OSG) interlayer dielectrics (ILD) has challenged the IC industry to formulate new methods of metrology and characterization. The impact of nanoindentation to understand and screen for integrated circuit failure mechanisms that are mainly predicated upon OSG nano-porosity is discussed. Failure modes include poor mechanical strength, low material stiffness, and brittle fracture due to low cohesive and adhesive fracture toughness, a particular danger during chemical-mechanical polishing (CMP). By developing a methodology to predict failure modes, we are able to screen multiple candidate low-k materials. Nanoindentation measurements of elastic modulus, hardness, and fracture toughness and what they reveal about OSG porosity are discussed.

引用

页码：487 / 499

页数：13

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