Impact ionization coefficients of Al0.8Ga0.2As

被引：22
|
作者：
Ng, BK [1 ]
David, JPR [1 ]
Plimmer, SA [1 ]
Hopkinson, M [1 ]
Tozer, RC [1 ]
Rees, GJ [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期
关键词：
D O I：
10.1063/1.1336556
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impact ionization coefficients in bulk Al0.8Ga0.2As have been determined from photomultiplication measurements over the electric field range of 328-519 kV/cm. Unlike in AlxGa1-xAs (x less than or equal to0.6), where the electron to hole ionization coefficients ratios (1/k) are less than 2, the 1/k value in Al0.8Ga0.2As was found to be greater than 10. Excess noise measurements corroborated the multiplication results, suggesting that this material may be a suitable multiplication medium for low noise avalanche photodiodes. (C) 2000 American Institute of Physics. [S0003-6951(01)04501-6].
引用
收藏
页码：4374 / 4376
页数：3
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