Resist removal by using wet ozone

被引:24
|
作者
Horibe, Hideo [1 ]
Yamamoto, Masashi
Ichikawa, Tomokazu
Kamimura, Tomosumi
Tagawa, Seiichi
机构
[1] Kanazawa Inst Technol, Res Lab Integrated Technol Syst, Haku San, Ishikawa, Japan
[2] Kochi Natl Coll Technol, Dept Mat Sci & Engn, Kochi 7838508, Japan
[3] Osaka Inst Technol, Informat & Commun Engn, Dept Elec, Osaka 5658585, Japan
[4] Osaka Univ, Inst Sci & Ind Res, Ibaraki 5670047, Japan
关键词
resist; removal; wet ozone; chemicals; resist implanted ions; environment;
D O I
10.2494/photopolymer.20.315
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We have investigated the resist removal by using wet ozone. Removal rate of the resist was optimum when both of the wet ozone and substrate temperature was at around 60°C. In that condition, the resist removal was better as decreasing the ozone irradiation interval time. Furthermore, in the better conditions the removal rate of resist was accomplished up to 3.4 μm/min by means of being 1.30mm of gap length between the substrate and the ozone irradiation nozzle. In spite of the implanted ion species, the resist with ions of 5×1012 atoms/cm2 could be removed. It was found that the resist removal rate by using wet ozone was corresponded to the removing with chemicals. ©2007TAPJ.
引用
收藏
页码:315 / 318
页数:4
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