A noble suspended type thin film resonator (STFR) using the SOI technology

被引：23
|
作者：
Kim, HH
Ju, BK
Lee, YH
Lee, SH
Lee, JK
Kim, SW
机构：
[1] Korea Inst Sci & Technol, Elect Mat & Devices Res Ctr, Seoul 130650, South Korea
[2] Korea Inst Sci & Technol, Thin Film Technol Res Ctr, Seoul 130650, South Korea
[3] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2001年 / 89卷 / 03期
关键词：
suspended; thin film resonator; SOI technology; piezoelectric; AlN;
D O I：
10.1016/S0924-4247(00)00551-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication and characteristics of suspended type thin film resonators (STFRs) using surface micromachining of the SOI technology, have been studied. The size of the active part of STFRs is 160 mum x 160 mum. For the piezoelectric AlN thin film, the following etch rate was observed 200 nm min(-1) in 0.6 wt.% TMAH. The thickness of the piezoelectric AlN film for the STFR is 2 mum. Cr thin film is used as the top and bottom electrode. This device is free-standing and has a resonant frequency of 1.65 GHz for the 2 mum AlN thin film, a K-eff(2) of 2.4%, Q(s) of 91.7, Q(p) of 87.7. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：255 / 258
页数：4
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