LOW-TEMPERATURE GROWTH AND ELECTRIC PROPERTIES OF K0.5Na0.5NbO3 THIN FILMS BY MICROWAVE IRRADIATION

被引：1
|
作者：
Li, N. [1 ]
机构：
[1] Shenyang Aerosp Univ, Sch Mat Sci & Engn, Shenyang 110136, Liaoning, Peoples R China
来源：
SURFACE REVIEW AND LETTERS | 2018年 / 25卷 / 07期
关键词：
KNN; thin films; microwave irradiation; electric property; CRYSTALLIZATION; NA;
D O I：
10.1142/S0218625X19500148
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
K0.5Na0.5NbO3 wet films were spin-coated on Pt/Ti/SiO2/Si substrates by chemical solution deposition method. The microwave irradiation was introduced as the annealing method. The microstructure and electric properties of KNN thin films were tested and analyzed. It was found that the KNN thin film can be well crystallized by microwave irradiation at the temperature as low as 425 degrees C. The KNN thin film annealed at 425 degrees C gains the uniform microstructure, grain refinement, better electric properties and low leakage current density.
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页数：6
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