Polysilicon piezoresistive pressure sensor using Silicon-On-Insulator (SOI) approach

被引：1

作者：

Bhat, KN ^{[1
]}

Bhattacharya, E ^{[1
]}

DasGupta, A ^{[1
]}

DasGupta, N ^{[1
]}

KotiReddy, BR ^{[1
]}

Rao, PRS ^{[1
]}

Balasubramaniam, K ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Microelect Sect, Madras 600036, Tamil Nadu, India

来源：

SMART MATERIALS, STRUCTURES, AND SYSTEM, PTS 1 AND 2 | 2003年 / 5062卷

关键词：

polysilicon; piezoresistive effect; pressure sensor; electrical trimming;

D O I：

10.1117/12.514725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design and fabrication of polysilicon piezoresistive pressure sensor are presented The design considerations such as the membrane thickness and the arrangement pattern of polysilicon piezo-resistors on the membrane are discussed with emphasis on the use of SOI approach. The results obtained on the pressure sensors and the temperature coefficient of resistivity of polysilicon resistors are presented. The results presented include the electrical trimming of polysilicon resistors for compensating zero offset voltage in the pressure sensors.

引用

页码：853 / 862

页数：10

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